Description
Silicon-on-Insulator wafers with 2μm buried oxide layer. Ideal for RF, high-voltage, and radiation-hard applications.

Silicon-on-Insulator wafers with 2μm buried oxide layer. Ideal for RF, high-voltage, and radiation-hard applications.
Silicon-on-Insulator wafers with 2μm buried oxide layer. Ideal for RF, high-voltage, and radiation-hard applications.